| 发明名称 |
METHOD FOR PRODUCING NITRIDE CRYSTAL AND NITRIDE CRYSTAL |
| 摘要 |
A high-quality nitride crystal can be produced efficiently by charging a nitride crystal starting material that contains tertiary particles having a maximum diameter of from 1 to 120 mm and formed through aggregation of secondary particles having a maximum diameter of from 100 to 1000 μm, in the starting material charging region of a reactor, followed by crystal growth in the presence of a solvent in a supercritical state and/or a subcritical state in the reactor, wherein the nitride crystal starting material is charged in the starting material charging region in a bulk density of from 0.7 to 4.5 g/cm3 for the intended crystal growth. |
| 申请公布号 |
US2017051434(A1) |
申请公布日期 |
2017.02.23 |
| 申请号 |
US201615346959 |
申请日期 |
2016.11.09 |
| 申请人 |
MITSUBISHI CHEMICAL CORPORATION |
发明人 |
MIKAWA Yutaka;FUJISAWA Hideo;KAMADA Kazunori;NAGAOKA Hirobumi;KAWABATA Shinichiro;KAGAMITANI Yuji |
| 分类号 |
C30B29/40;C01B21/06;H01L21/02;H01L29/20;H01S5/30;H01L29/36;H01L33/00;H01L33/32;H01L33/02;H01S5/323;C30B7/10;H01L29/207 |
主分类号 |
C30B29/40 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. (canceled) |
| 地址 |
Chiyoda-ku JP |
