| 摘要 |
Provided is a cobalt sputtering target that is characterized by having a purity of 99.99% or more, by the surface magnetic permeability in the sputtering surface thereof being 5-10, and by the standard deviation of surface magnetic permeability in the sputtering surface thereof being within 3. The cobalt sputtering target and production method therefor make it possible to improve the uniformity of a film by reducing magnetic permeability in a direction that is parallel to the sputtering surface, increasing magnetic permeability in a direction that is perpendicular to the sputtering surface, improving sputtering efficiency, and minimizing variation in the surface magnetic permeability in the sputtering surface. |
