发明名称 RF AMPLIFIER MODULE AND METHODS OF MANUFACTURE THEREOF
摘要 An amplifier module includes a module substrate. Conductive interconnect structures and an amplifier device are coupled to a top surface of the module substrate. The interconnect structures partially cover the module substrate top surface to define conductor-less areas at the top surface. The amplifier device includes a semiconductor substrate, a transistor, a conductive feature coupled to a bottom surface of the semiconductor substrate and to at least one of the interconnect structures, and a filter circuit electrically coupled to the transistor. The conductive feature only partially covers the semiconductor substrate bottom surface to define a conductor-less region that spans a portion of the bottom surface. The conductor-less region is aligned with at least one of the conductor-less areas at the module substrate top surface. The filter circuit includes a passive component formed over a portion of the semiconductor substrate top surface that is directly opposite the conductor-less region.
申请公布号 EP3133735(A1) 申请公布日期 2017.02.22
申请号 EP20160182864 申请日期 2016.08.04
申请人 NXP USA, Inc. 发明人 Jones, Jeffrey K.
分类号 H03F3/195;H01L21/48;H01L23/498;H01L49/02;H03F1/02;H03F1/56;H03F3/21;H03F3/213 主分类号 H03F3/195
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