发明名称 METHOD FOR PRODUCING A SCHOTTKY DIODE ON A DIAMOND SUBSTRATE
摘要 A method for producing a Schottky diode, including the following steps: oxygenating the surface of a semiconductive layer of monocrystalline diamond, in such a way as to replace hydrogen surface terminations of the semiconductive layer with oxygen surface terminations; and forming, by physical vapour deposition, a first conductive layer of zirconium or indium-tin oxide on the surface of the semiconductive layer.
申请公布号 EP2989656(B1) 申请公布日期 2017.02.22
申请号 EP20140722295 申请日期 2014.04.18
申请人 Centre National de la Recherche Scientifique;Université Grenoble Alpes;Institut Polytechnique de Grenoble 发明人 EON, David;GHEERAERT, Etienne;MURET, Pierre;PERNOT, Julien;TRAORE, Aboulaye
分类号 H01L21/285;H01L29/16;H01L29/47 主分类号 H01L21/285
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