发明名称 |
METHOD FOR PRODUCING A SCHOTTKY DIODE ON A DIAMOND SUBSTRATE |
摘要 |
A method for producing a Schottky diode, including the following steps: oxygenating the surface of a semiconductive layer of monocrystalline diamond, in such a way as to replace hydrogen surface terminations of the semiconductive layer with oxygen surface terminations; and forming, by physical vapour deposition, a first conductive layer of zirconium or indium-tin oxide on the surface of the semiconductive layer. |
申请公布号 |
EP2989656(B1) |
申请公布日期 |
2017.02.22 |
申请号 |
EP20140722295 |
申请日期 |
2014.04.18 |
申请人 |
Centre National de la Recherche Scientifique;Université Grenoble Alpes;Institut Polytechnique de Grenoble |
发明人 |
EON, David;GHEERAERT, Etienne;MURET, Pierre;PERNOT, Julien;TRAORE, Aboulaye |
分类号 |
H01L21/285;H01L29/16;H01L29/47 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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