发明名称 METROLOGY METHOD AND APPARATUS, SUBSTRATES FOR USE IN SUCH METHODS, LITHOGRAPHIC SYSTEM AND DEVICE MANUFACTURING METHOD
摘要 A substrate has a plurality of overlay gratings formed thereon by a lithographic process. Each overlay grating has a known overlay bias. The values of overlay bias include for example two values in a region centered on zero and two values in a region centered on P/2, where P is the pitch of the gratings. Overlay is calculated from asymmetry measurements for the gratings using knowledge of the different overlay bias values, each of the overall asymmetry measurements being weighted by a corresponding weight factor. Each one of the weight factors represents a measure of feature asymmetry within the respective overlay grating. The calculation is used to improve subsequent performance of the measurement process, and/or the lithographic process. Some of the asymmetry measurements may additionally be weighted by a second weight factor in order to eliminate or reduce the contribution of phase asymmetry to the overlay.
申请公布号 NL2017271(A) 申请公布日期 2017.02.22
申请号 NL20162017271 申请日期 2016.08.02
申请人 ASML NETHERLANDS B.V. 发明人 MARTIN JACOBUS JOHAN JAK;HENDRIK JAN HIDDE SMILDE;RICHARD JOHANNES FRANCISCUS VAN HAREN;HENRICUS WILHELMUS MARIA VAN BUEL;VICTOR EMANUEL CALADO;TE-CHIH HUANG
分类号 G03F7/20;G01N21/95 主分类号 G03F7/20
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