发明名称 ウェーハの研磨方法及びウェーハの研磨装置
摘要 This invention is a wafer polishing method, namely an indexed polishing method in which a plurality of polishing heads, a plurality of platens to which polishing cloths are bonded, and a loading/unloading stage for attaching and detaching wafers to and from the polishing heads are prepared, the platens and the loading/unloading stage are arranged concentrically, and the polishing heads are rotated, thereby simultaneously polishing a plurality of wafers while switching up the platens used therefor. Said wafer polishing method is characterized in that after polishing of a wafer is interrupted by a platen switch, polishing of said wafer resumes within 15 seconds, and after a wafer is done being polished, the operation of detaching said wafer from the polishing head starts within 15 seconds. This results in a polishing method in which the characteristic haze irregularity that occurs in index polishing devices during the polishing step and between the completion of polishing and the beginning of the detachment operation can be prevented effectively.
申请公布号 JP6083346(B2) 申请公布日期 2017.02.22
申请号 JP20130157157 申请日期 2013.07.29
申请人 信越半導体株式会社 发明人 佐藤 三千登;上野 淳一;石井 薫
分类号 H01L21/304 主分类号 H01L21/304
代理机构 代理人
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