发明名称 |
THREE DIMENSIONAL MEMORY STRUCTURE |
摘要 |
A method to fabricate a three dimensional memory structure includes forming an array stack, creating a layer of sacrificial material above the array stack, etching a hole through the layer of sacrificial material and the array stack, creating a pillar of semiconductor material in the hole to form at least two vertically stacked flash memory cells that use the pillar as a common body, removing at least some of the layer of sacrificial material around the pillar to expose a portion of the pillar, and forming a field effect transistor (FET) using the portion of the pillar as the body of the FET. |
申请公布号 |
EP2965360(A4) |
申请公布日期 |
2017.02.22 |
申请号 |
EP20140760437 |
申请日期 |
2014.03.04 |
申请人 |
Intel Corporation |
发明人 |
LIU, Haitao;MOULI, Chandra V.;PARAT, Krishna K.;SUN, Jie;HUANG, Guangyu |
分类号 |
H01L27/115;H01L29/66;H01L29/788;H01L29/792 |
主分类号 |
H01L27/115 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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