| 摘要 |
A semiconductor device 1 includes a plurality of trench gates 3 provided abreast in a semiconductor substrate 2; an interlayer insulation film 4 having opening 45 from which a part of a front surface of the semiconductor substrate 2 is exposed; and contact plugs 5 provided in the openings 45. The interlayer insulation film 4 comprises a plurality of first portions 41, each of which covers a corresponding one of the trench gates 3, and a plurality of second portions 42, each of which is provided between adjacent first portions 41 and along a direction intersecting with the first portions 41. The openings 45 are provided at an area surrounded by the first portions 41 and the second portions 42, a length of the openings 45 in a direction along the first portions 41 is shorter than a length of the openings 45 in a direction along the second portions 42 intersecting with the first portions 41. |
