发明名称 レジストパターン形成方法
摘要 A method of forming a resist pattern including: forming a resist film on a substrate using a resist composition containing a base component (A) which exhibits decreased solubility in an organic solvent by action of an acid; exposing the resist film; and patterning by a negative-tone development using a developing solution containing the organic solvent, wherein the base component (A) contains a resin component (A1) having a structural unit (a0) which generates acid upon exposure and a structural unit (a1) derived from an acrylate ester which may have the hydrogen atom bonded to the carbon atom on the α-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by the action of acid, and the developing solution contains a nitrile solvent.
申请公布号 JP6084157(B2) 申请公布日期 2017.02.22
申请号 JP20130503569 申请日期 2012.03.07
申请人 東京応化工業株式会社 发明人 平野 智之;高木 大地;塩野 大寿;昆野 健理;高木 勇
分类号 G03F7/039;C08F220/28;C08F220/38;G03F7/038;G03F7/32;H01L21/027 主分类号 G03F7/039
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