| 摘要 |
PROBLEM TO BE SOLVED: To provide a MIS field effect transistor of an SOI structure composed of a perfect single crystal semiconductor layer with surrounding gate electrode.SOLUTION: A MIS field effect transistor of an SOI structure composed of a perfect single crystal semiconductor layer comprises: a first insulation film 2 provided on a semiconductor substrate 1; a second insulation film 3 selectively provided on the first insulation film 2; a base insulation film barrier layer 5 and a third insulation film 6 which are selectively provided on the second insulation film 3; a pair of first semiconductor layers 7 provided on the base insulation film barrier layer 5 and the third insulation film 6; a semiconductor layer which has a structure where the pair of first semiconductor layers 7 sandwich a semiconductor layer 8 and which is provided in an island shape and insulatively isolated; a surrounding gate electrode 14 provided around the second semiconductor layer 8 via a gate insulation film 13; high-concentration and low-concentration source-drain regions (9, 10, 11, 12) which are basically provided in the first semiconductor layers 7; and a channel region is basically provided in the semiconductor layer 8. |
