| 摘要 |
PROBLEM TO BE SOLVED: To provide: a method for manufacturing a group III semiconductor light-emitting device, which enables the increase in light emission output while keeping a forward voltage; and a group III semiconductor light-emitting device.SOLUTION: In a method for manufacturing a group III nitride semiconductor light-emitting device 1 including an n-type semiconductor layer 32, a light-emitting layer 40 of a quantum well structure having a well layer and a barrier layer which include at least Al, and a p-type semiconductor layer 150 in this order, a process for forming the p-type semiconductor layer 150 includes: a step for forming, over the light-emitting layer 40, an electronic block layer 51 larger than the barrier layer in Al composition; a step for forming a first p-type contact layer 153 of AlGaN directly on the electronic block layer 51; and a step for forming a second p-type contact layer 54 of AlGaN directly on the first p-type contact layer 153. The first p-type contact layer is formed by use of a carrier gas including nitrogen as a primary component. The second p-type contact layer is formed by use of a carrier gas including hydrogen as a primary component.SELECTED DRAWING: Figure 2 |
