Restoring OFF-state stress degradation of threshold voltage

摘要

The present invention relates to a method (10) for at least partially compensating for a change in threshold voltage level of a FET transistor induced by OFF-state stress degradation. The method comprises determining (12) a signal indicative of a change in threshold voltage level of the FET with respect to a reference threshold voltage level, and applying (15) a restoration signal to the FET. This restoration signal is adapted for shifting the threshold voltage level of the FET in a direction having opposite sign with respect to the change in threshold voltage level. The step of applying the restoration signal is furthermore taking into account the signal indicative of the change in threshold voltage level.