| 摘要 |
Provided are magnetic sensors, which include a magnetic tunnel junction (MTJ) magnetoresistive element, a first electrode contacting at least a portion of a surface of the MTJ magnetoresistive element and extending beyond an edge of the surface of the MTJ magnetoresistive element, and a second electrode contacting at least a portion of an opposing surface of the MTJ magnetoresistive element and extending beyond an edge of the opposing surface of the MTJ magnetoresistive element, where facing surfaces of the extending portions of the first and second electrodes are non-overlapping. Also provided are devices, systems and methods in which the subject magnetic sensors find use. |
