Integrated circuit device including polycrystalline semiconductor film and method of manufacturing the same

摘要

An IC device includes a polycrystalline silicon thin film interposed between a first level semiconductor circuit and a second level semiconductor circuit which are formed on a substrate and disposed to vertically overlap each other. The polycrystalline silicon thin film includes at least one silicon single crystal. The at least one silicon single crystal includes a flat horizontal portion, which provides an active region of the second level semiconductor device, and a pin-shaped protruding portion protruding from the flat horizontal portion toward the first level semiconductor device.

主权项

1. A method of manufacturing an integrated circuit (IC) device, the method comprising:
forming a first level semiconductor device on a substrate; forming an inter-device dielectric layer that covers the first level semiconductor device; forming a pinhole that penetrates at least a portion of the inter-device dielectric layer; forming a polycrystalline silicon thin film comprising at least one silicon single crystal that extends from an inside of the pinhole up to an upper surface of the inter-device dielectric layer; and forming a second level semiconductor device on the polycrystalline silicon thin film by using the at least one silicon single crystal as an active region.