| 主权项 |
1. A magnetic storage device comprising:
a first magnetoresistive effect element comprising a first magnetic layer having a first coercivity, a second magnetic layer having a second coercivity higher than the first coercivity, and a third magnetic layer having a third coercivity higher than the second coercivity, a magnetization orientation of the second magnetic layer being antiparallel to a magnetization orientation of the third magnetic layer; a second magnetoresistive effect element comprising a fourth magnetic layer having a fourth coercivity, a fifth magnetic layer having a fifth coercivity higher than the fourth coercivity, and a sixth magnetic layer having a sixth coercivity higher than the fifth coercivity, a magnetization orientation of the fifth magnetic layer being parallel to a magnetization orientation of the sixth magnetic layer; and an amplifier having a first input coupled to the first magnetoresistive effect element and a second input coupled to the second magnetoresistive effect element, and amplifying a difference between a potential of the first input and a potential of the second input. |
