Method and system for reducing pole imbalance by adjusting exposure intensity

摘要

A method and system for adjusting exposure intensity to reduce unwanted lithographic effects is disclosed. In some exemplary embodiments, the method of photolithography includes receiving a mask and a workpiece. An orientation of an illumination pattern relative to the mask is determined, and an intensity profile of the illumination pattern is adjusted according to the orientation. The mask is exposed to radiation according to the illumination pattern and the intensity profile. Radiation resulting from the exposing of the mask is utilized to expose the workpiece. In some such embodiments, the intensity profile includes an intensity that varies across an illuminated region of the illumination pattern.

主权项

1. A method of photolithography, the method comprising:
receiving a mask and a workpiece; determining an orientation of an illumination pattern relative to the mask; adjusting an intensity profile of the illumination pattern based on the orientation, wherein the intensity profile defines exposure intensities for various locations of the illumination pattern, wherein an exposure intensity is adjusted for a location based on a trigonometric function of an angle of incidence of radiation on the mask at the location when the orientation is determined; exposing the mask to radiation according to the illumination pattern and the intensity profile; and utilizing radiation resulting from the exposing of the mask to expose the workpiece.