发明名称 Mixed-width memory techniques for programmable logic devices
摘要 Various techniques are provided to efficiently implement user designs in programmable logic devices (PLDs). In one example, a computer-implemented method includes receiving a design identifying operations to be performed by a PLD and synthesizing the design into a plurality of PLD components. The synthesizing includes detecting a mixed-mode memory operation in the design. The mixed-mode memory operation specifies memory access having different read and write data widths using a plurality of embedded memory blocks each having a fixed data width. The synthesizing further includes determining a reduced number of embedded memory blocks to implement the mixed-mode memory operation, and modifying the mixed-mode memory operation to remap the memory access to the reduced number of embedded memory blocks.
申请公布号 US9576093(B2) 申请公布日期 2017.02.21
申请号 US201414320169 申请日期 2014.06.30
申请人 LATTICE SEMICONDUCTOR CORPORATION 发明人 Rajappan Venkatesan;Tandyala Mohana;Xue Hua
分类号 G06F17/50 主分类号 G06F17/50
代理机构 Haynes and Boone, LLP 代理人 Haynes and Boone, LLP
主权项 1. A computer-implemented method comprising: receiving a design identifying operations to be performed by a programmable logic device (PLD); and synthesizing the design into a plurality of PLD components, wherein the synthesizing comprises: detecting a mixed-mode memory operation in the design, the mixed-mode memory operation specifying memory access having different read and write data widths using a plurality of embedded memory blocks each having a fixed data width, each of the plurality of embedded memory blocks being associated with a corresponding write enable signal to be used for enabling each embedded memory block for writing,determining a reduced number of embedded memory blocks to implement the mixed-mode memory operation, andmodifying the mixed-mode memory operation to remap the memory access to the reduced number of embedded memory blocks, the modifying comprising generating a write mask signal for each of the reduced number of embedded memory block, using the write enable signals, to allow a plurality of data portions to be written without overwriting each other in the reduced number of embedded memory blocks.
地址 Hillsboro OR US