发明名称 Tunable laser with high thermal wavelength tuning efficiency
摘要 A monolithically integrated thermal tunable laser comprising a layered substrate comprising an upper surface and a lower surface, and a thermal tuning assembly comprising a heating element positioned on the upper surface, a waveguide layer positioned between the upper surface and the lower surface, and a thermal insulation layer positioned between the waveguide layer and the lower surface, wherein the thermal insulation layer is at least partially etched out of an Indium Phosphide (InP) sacrificial layer, and wherein the thermal insulation layer is positioned between Indium Gallium Arsenide (InGaAs) etch stop layers.
申请公布号 US9577408(B2) 申请公布日期 2017.02.21
申请号 US201514986239 申请日期 2015.12.31
申请人 Futurewei Technologies, Inc. 发明人 Chen Hongmin;Yan Xuejin;Miao Rongsheng;Shen Xiao;Liu Zongrong
分类号 H01S5/06;H01S3/042;H01L21/311;H01S5/026;H01S5/042;H01S5/20;H01S5/0625;H01S5/125;H01S5/50;G02B6/12 主分类号 H01S5/06
代理机构 Futurewei Technologies, Inc. 代理人 Futurewei Technologies, Inc.
主权项 1. A monolithically integrated thermal tunable laser, comprising: a layered substrate, comprising: a plurality of Indium Gallium Arsenide (InGaAs) etch stop layers; andan Indium Aluminum Arsenide (InAlAs) sacrificial layer positioned between the plurality of InGaAs etch stop layers; a heating element attached to the layered substrate; and a thermal isolation layer etched into the layered substrate and bounded by the InGaAs etch stop layers; wherein a portion of the InAlAs sacrificial layer is etched out to create the thermal isolation layer.
地址 Plano TX US