发明名称 |
Magnetoresistance effect element and magnetic memory |
摘要 |
A magnetoresistance effect element and a magnetic memory having thermal stability expressed by a thermal stability factor of 70 or more even with a fine junction size. The magnetoresistance effect element includes a first magnetic layer of an invariable magnetization direction forming a reference layer, a second magnetic layer of a variable magnetization direction forming a recording layer, and a first non-magnetic layer disposed between the first and second magnetic layers in a thickness direction of the first and second magnetic layers. At least one of the first and second magnetic layers has the following relationship between D (nm) and t (nm): D<0.9t+13, where D is a junction size corresponding to the length of a longest straight line on an end surface perpendicular to the thickness direction, and t is a layer thickness. The junction size is 30 nm or less. |
申请公布号 |
US9577182(B2) |
申请公布日期 |
2017.02.21 |
申请号 |
US201415029860 |
申请日期 |
2014.10.20 |
申请人 |
TOHOKU UNIVERSITY |
发明人 |
Ikeda Shoji;Sato Hideo;Fukami Shunsuke;Yamanouchi Michihiko;Matsukura Fumihiro;Ohno Hideo;Ishikawa Shinya |
分类号 |
H01L43/08;G11C11/16;H01L43/02;H01L27/22 |
主分类号 |
H01L43/08 |
代理机构 |
Oliff PLC |
代理人 |
Oliff PLC |
主权项 |
1. A magnetoresistance effect element comprising a first magnetic layer of a fixed magnetization direction that is either an upward direction or a downward direction in a thickness direction, a second magnetic layer of a variable magnetization direction that can be varied upwardly or downwardly in a thickness direction, and a first non-magnetic layer disposed between the first and second magnetic layers in a thickness direction of the first and second magnetic layers,
wherein the second magnetic layer has the following relationship between D (nm) and t (nm):
D<0.9t+13, where D is a junction size corresponding to the length of a longest straight line on an end surface perpendicular to the thickness direction, and t is its layer thickness. |
地址 |
Sendai-shi JP |