Solar cell and manufacturing method thereof

摘要

A solar cell is formed to have a silicon semiconductor substrate of a first conductive type; an emitter layer having a second conductive type opposite the first conductive type and formed on a first surface of the silicon semiconductor substrate; a back surface field layer having the first conductive type and formed on a second surface of the silicon semiconductor substrate opposite to the first surface; and wherein the emitter layer includes at least a first shallow doping area and the back surface field layer includes at least a second shallow doping area, and wherein a thickness of the first shallow doping area of the emitter layer is different from a thickness of the second shallow doping area of the back surface field layer.

主权项

1. A method for manufacturing a solar cell, the method comprising:
preparing a silicon semiconductor substrate of a first conductive type; forming a first impurity doped region by a first ion implantation of a first impurity having a second conductive type opposite the first conductive type on a first surface of the silicon semiconductor substrate; forming a second impurity doped region by performing a second ion implantation of a second impurity having the first conductive type on a second surface of the silicon semiconductor substrate opposite to the first surface; and performing a heat treatment to both of the first impurity doped region and the second impurity doped region to form an emitter layer and a back surface field layer, respectively, wherein the emitter layer includes at least a first shallow doping area and the back surface field layer includes at least a second shallow doping area, and wherein a thickness of the first shallow doping area of the emitter layer is different from a thickness of the second shallow doping area of the back surface field layer.