| 发明名称 | Semiconductor device and manufacturing method thereof | ||
| 摘要 | A semiconductor device includes a first wiring comprising a first conductive material on a semiconductor layer, a second wiring comprising the first conductive material on the semiconductor layer, a third wiring comprising a second conductive material different from the first conductive material, and an insulation film on the semiconductor layer between the first wiring and the second wiring and between the second wiring and the third wiring. The second wiring is provided on at least two sides of the third wiring, and a mean free path of free electrons in the first conductive material is shorter than a mean free path of free electrons in the second conductive material, or the first conductive material shows quantized conduction and the second conductive material does not show quantized conduction. The first wiring, the second wiring, the third wiring, and the insulation film are in one wiring layer provided on the semiconductor layer. | ||
| 申请公布号 | US9576905(B2) | 申请公布日期 | 2017.02.21 |
| 申请号 | US201615052377 | 申请日期 | 2016.02.24 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Ishikura Taishi;Isobayashi Atsunobu;Kajita Akihiro |
| 分类号 | H01L21/768;H01L23/528;H01L23/532;H01L27/115;H01L21/311;H01L21/8234;H01L21/02 | 主分类号 | H01L21/768 |
| 代理机构 | Patterson & Sheridan, LLP | 代理人 | Patterson & Sheridan, LLP |
| 主权项 | 1. A semiconductor device comprising: a first wiring comprising a first conductive material on a semiconductor layer; a second wiring comprising the first conductive material on the semiconductor layer; a third wiring comprising a second conductive material different from the first conductive material; and an insulation film on the semiconductor layer between the first wiring and the second wiring and between the second wiring and the third wiring, wherein the second wiring is provided on at least two sides of the third wiring, a mean free path of free electrons in the first conductive material is shorter than a mean free path of free electrons in the second conductive material, or the first conductive material shows quantized conduction and the second conductive material does not show quantized conduction, and the first wiring, the second wiring, the third wiring, and the insulation film are in one wiring layer provided on the semiconductor layer. | ||
| 地址 | Tokyo JP | ||