Semiconductor structure and semiconductor fabricating process for the same

摘要

A semiconductor structure and a fabricating process for the same are provided. The semiconductor fabricating process includes providing a first dielectric layer, a transitional layer formed on the first dielectric layer, and a conductive fill penetrated through the transitional layer and into the first dielectric layer; removing the transitional layer; and forming a second dielectric layer over the conductive fill and the first dielectric layer.

主权项

1. A structure comprising:
a first dielectric layer; an opening in the first dielectric layer; a first conductive feature, wherein an entirety of top surfaces of the first conductive feature is higher than the first dielectric layer, and the first conductive feature comprising:
a first portion in the opening, wherein the first portion of the first conductive feature contacts sidewalls of the first dielectric layer, with the sidewalls facing the opening; anda second portion over the first dielectric layer, with the second portion having a first edge; a second conductive feature over the first conductive feature, wherein the first and the second conductive features are formed of different materials, and the second conductive feature comprises a second edge aligned with the first edge; and a barrier layer along the second edge of the second conductive feature.