发明名称 Active electrode materials and methods for making the same
摘要 In an example of a method for making a silicon-based active electrode material, a silicon active material precursor is introduced into a carrier gas. Another active material precursor is introduced into the carrier gas prior to, simultaneously with or subsequent to the silicon active material precursor. The other active material precursor is selected from a tin active material precursor, an aluminum active material precursor, a graphene active material precursor, and combinations thereof. The carrier gas containing the precursors is exposed to plasma vaporization, and a material is formed. The material includes i) an alloy of phase separated silicon and tin and/or aluminum, or ii) a graphene layer having silicon nanoparticles and tin nanoparticles, aluminum nanoparticles, or combinations of tin and aluminum nanoparticles deposited on a surface thereof, or iii) a graphene layer having an alloy of phase separated silicon and tin, aluminum, or tin and aluminum deposited on a surface thereof.
申请公布号 US9577251(B2) 申请公布日期 2017.02.21
申请号 US201414227289 申请日期 2014.03.27
申请人 GM Global Technology Operations LLC 发明人 Xiao Xingcheng;Cai Mei
分类号 H01M4/04;H01M4/36;H01M4/1395;H01M4/38;H01M4/46;H01M4/62 主分类号 H01M4/04
代理机构 Dierker & Kavanaugh, P.C. 代理人 Dierker & Kavanaugh, P.C.
主权项 1. A method for making a silicon-based active electrode material, the method comprising: introducing a silicon active material precursor to a carrier gas; prior to, simultaneously with, or subsequent to the introduction of the silicon active material precursor to the carrier gas, introducing a graphene active material precursor to the carrier gas; prior to, simultaneously with, or subsequent to the introduction of the silicon active material precursor to the carrier gas, introducing an other active material precursor to the carrier gas, the other active material precursor being selected from a group consisting of a tin active material precursor, an aluminum active material precursor, and combinations thereof; and exposing the carrier gas containing any of the silicon active material precursor, the graphene active material precursor, the other active material precursor, or combinations thereof to plasma vaporization, thereby forming a material including a graphene layer having an alloy of phase separated i) silicon and ii) tin, aluminum, or tin and aluminum deposited on a surface thereof.
地址 Detroit MI US
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