发明名称 Piezoelectric device and method for producing piezoelectric device
摘要 A piezoelectric device that prevents defects due to pyroelectric charge without limiting how the piezoelectric device can be used includes a first metal layer located on a bonding surface of a piezoelectric single crystal substrate. A second metal layer is located on a bonding surface of a support substrate. The first and second metal layers are overlaid on each other to define a metal bonded layer. Subsequently, by oxidizing the metal bonded layer, a semi-conducting layer is formed.
申请公布号 US9577178(B2) 申请公布日期 2017.02.21
申请号 US201414164318 申请日期 2014.01.27
申请人 Murata Manufacturing Co., Ltd. 发明人 Iwamoto Takashi
分类号 H03H9/02;H01L41/047;H01L41/312;H01L41/08;H01L41/313;H03H3/04;H03H3/10;H03H3/02 主分类号 H03H9/02
代理机构 Keating & Bennett, LLP 代理人 Keating & Bennett, LLP
主权项 1. A piezoelectric device comprising: a support substrate; a first oxide layer stacked on the support substrate; a semi-conducting layer composed of a semiconductor material or a mixture of a metal and an oxide of the metal and disposed on the first oxide layer; a second oxide layer stacked on the semi-conducting layer; a piezoelectric thin film stacked on the second oxide layer; and a functional electrode disposed on the piezoelectric thin film.
地址 Kyoto JP