发明名称 |
Piezoelectric device and method for producing piezoelectric device |
摘要 |
A piezoelectric device that prevents defects due to pyroelectric charge without limiting how the piezoelectric device can be used includes a first metal layer located on a bonding surface of a piezoelectric single crystal substrate. A second metal layer is located on a bonding surface of a support substrate. The first and second metal layers are overlaid on each other to define a metal bonded layer. Subsequently, by oxidizing the metal bonded layer, a semi-conducting layer is formed. |
申请公布号 |
US9577178(B2) |
申请公布日期 |
2017.02.21 |
申请号 |
US201414164318 |
申请日期 |
2014.01.27 |
申请人 |
Murata Manufacturing Co., Ltd. |
发明人 |
Iwamoto Takashi |
分类号 |
H03H9/02;H01L41/047;H01L41/312;H01L41/08;H01L41/313;H03H3/04;H03H3/10;H03H3/02 |
主分类号 |
H03H9/02 |
代理机构 |
Keating & Bennett, LLP |
代理人 |
Keating & Bennett, LLP |
主权项 |
1. A piezoelectric device comprising:
a support substrate; a first oxide layer stacked on the support substrate; a semi-conducting layer composed of a semiconductor material or a mixture of a metal and an oxide of the metal and disposed on the first oxide layer; a second oxide layer stacked on the semi-conducting layer; a piezoelectric thin film stacked on the second oxide layer; and a functional electrode disposed on the piezoelectric thin film. |
地址 |
Kyoto JP |