| 主权项 |
1. A non-volatile memory device comprising:
an isolation layer formed in a substrate to define an active region; a control plug formed over the isolation layer; a floating gate formed over the isolation layer and being separated from the control plug by a first gap, and the floating gate extending over the active region; a junction region formed in the active region and on both sides of the floating gate; and contact plugs formed over the junction regions, where each of the contact plugs is separated from the floating gate by a second gap and a width of the first gap is smaller than a width of the second gap, wherein the control plug only overlaps with the isolation layer and the floating gate overlaps with both the isolation layer and the active region, and the floating gate is bent to have a first portion which extends in a first direction and a second portion which is in contact with the first portion and extends in a second direction crossing the first direction, where the first portion and the second portion of the floating gate face different sidewalls of the control plug, respectively. |
