Semiconductor device and method of manufacturing the same

摘要

Disclosed is a semiconductor device, including: stack structures including interlayer insulating patterns and conductive line patterns, which are alternately stacked, and separated by a first slit; string pillars passing through the stack structures; and dummy holes passing through top portions of the stack structures to be spaced apart from bottom surface of the stack structures and disposed between the string pillars.

主权项

1. A semiconductor device, comprising:
stack structures including interlayer insulating patterns and conductive line patterns, which are alternately stacked; a first slit between the stack structures; string pillars passing through the stack structures; and dummy holes passing through top portions of the stack structures to be spaced apart from bottom surface of the stack structures and disposed between the string pillars, wherein each of the dummy holes is filled with a filling material different from materials of structures of the string pillars, and wherein each of the conductive line patterns includes:
a first conductive pattern formed in a line pattern area between two interlayer insulating patterns, which are arranged adjacent to each other in the vertical direction, and formed along surfaces of the interlayer insulating patterns and the string pillars;a second conductive pattern provided in the line pattern area and provided over the first conductive pattern; anda non-conductive pattern provided in the line pattern area, provided between each of the string pillars and the first conductive pattern, and surrounded by the first conductive pattern.