Tunnel field effect transistors

摘要

Tunnel field effect devices and methods of fabricating tunnel field effect devices are described. In one embodiment, the semiconductor device includes a first drain region of a first conductivity type disposed in a first region of a substrate, a first source region of a second conductivity type disposed in the substrate, the second conductivity type being opposite the first conductivity type, a first channel region electrically coupled between the first source region and the first drain region, the first source region underlying a least a portion of the first channel region, and a first gate stack overlying the first channel region.

主权项

1. A semiconductor device comprising:
a first drain region of a first conductivity type disposed in a first region of a substrate; a first source region of a second conductivity type disposed in said substrate, said second conductivity type being opposite said first conductivity type; a first channel region electrically coupled between said first source region and said first drain region, said first source region directly underlying at least a first portion of said first channel region; a first doped region of the first conductivity type disposed between the first source region and the first drain region, said first doped region contacting the first source region and the first drain region; and a first gate stack overlying said first channel region, wherein the first source region is separated from the first gate stack by the first channel region and the first doped region is separated from the first gate stack by the first channel region, wherein the first source region and the first drain region are heavily doped, wherein the first channel region is lowly doped having the first conductivity type; a tunnel junction at the intersection between the first source region and the first portion of the first channel region, wherein, the lowly doped first channel region has a lower dopant concentration than a dopant concentration of the heavily doped first source region so that, at the tunnel junction between the first source region and the first channel region, a net doping concentration varies abruptly from the heavily doped second conductivity type first source region to the lowly doped first conductivity type first channel region; and a p/n junction at the intersection between the first source region and the first doped region.