| 主权项 |
1. A semiconductor component, comprising at least one first contact structure (1, 2, 3, F.1, F.2, F.3) for at least one of feeding in or leading away charge carriers in relation to the semiconductor component, said first contact structure (1, 2, 3, F.1, F.2, F.3) has at least one contact-making point (1a, 2a, 3a, F.1a) for electrically conductively connecting the first contact structure (1, 2, 3, F.1, F.2, F.3) to an external terminal, and
said first contact structure has at least one first-order branching point (1.1a, 1.1b, F.1.1.a, 2.1a, 2.1b, 3.1a, 3.1b) proceeding from the contact-making point, at said first-order branching point at least one first-order subsequent conduction track (1.1A, 1.1B, F.1.1.A, 2.1A, 2.1B, 3.1A, 3.1B) branches off, each said at least one first-order subsequent conduction track has at least one second-order branching point (1.2a, 1.2b, 2.2a, 2.2b, 3.2a, 3.2b), at said second-order branching point at least one second-order subsequent conduction track (1.2A, 1.2B, 2.2A, 2.2B, 3.2A, 3.2A′, 3.2B, 3.2B′) branches off, wherein an electrical through-conduction resistance of each said second-order subsequent conduction track is higher than an electrical through-conduction resistance of the first-order subsequent conduction track connected to said second-order subsequent conduction track via an associated one of the second-order branching points, and at least one of the following conditions is met:
(a) the through-conduction resistances of the subsequent conduction tracks are chosen such that during operation of the semiconductor component an electrical conduction resistance power loss of each said second-order subsequent conduction track deviates by less than 10% from an electrical conduction resistance power loss of the first-order subsequent conduction track connected to said second-order subsequent conduction track via the associated second-order branching point, and an average electrical conduction resistance power losses of the conduction tracks deviate from one another by less than 10%, or(b) the through-conduction resistances of the subsequent conduction tracks are chosen such that during operation of the semiconductor component a current density of each said second-order subsequent conduction track deviates by less than 10% from a current density of the first-order subsequent conduction track connected to said second-order subsequent conduction track via the associated second-order branching point, and the average electrical conduction resistance power losses of the subsequent conduction tracks deviate from one another by less than 10%. |
