发明名称 | Light emitting device | ||
摘要 | A light emitting module including a substrate, a plurality of first light emitting diode (LED) chips and a plurality of second LED chips is provided. The substrate has a cross-shaped central region and a peripheral region surrounding the cross-shaped central region. The first LED chips are disposed on the substrate and at least located in the cross-shaped central region. The second LED chips are disposed on the substrate and at least located in the peripheral region. A size of each second LED chip is smaller than a size of each first LED chip. The number of the first LED chips located in the peripheral region is smaller than that in the cross-shaped central region. The number of the second LED chips located in the cross-shaped central region is smaller than that in the peripheral region. | ||
申请公布号 | US9574721(B2) | 申请公布日期 | 2017.02.21 |
申请号 | US201514715569 | 申请日期 | 2015.05.18 |
申请人 | Genesis Photonics Inc. | 发明人 | Sun Sheng-Yuan;Su Po-Jen |
分类号 | F21K99/00;F21V9/16;F21V13/02;H01L27/15;H01L25/075;H01L33/20;H01L33/50;F21Y101/00 | 主分类号 | F21K99/00 |
代理机构 | Jianq Chyun IP Office | 代理人 | Jianq Chyun IP Office |
主权项 | 1. A white light emitting device, comprising: a substrate; a plurality of first light emitting diode (LED) chips, each emitting light of a dominant wavelength in a range from 440 nm to 480 nm, the first LED chips being mounted on and electrically connected to the substrate, and a difference between the dominant wavelengths of at least two first LED chips being greater than or equal to 5 nm; a plurality of second LED chips, each emitting light of a dominant wavelength in a range from 600 nm to 760 nm, the second LED chips being mounted on and electrically connected to the substrate, and a difference between the dominant wavelengths of at least two second LED chips being greater than or equal to 5 nm; a plurality of third LED chips electrically connected to the substrate, wherein each of the third LED chips emits light of a dominant wavelength in a range from 500 nm to 560 nm; and a fluorescent layer, disposed on the substrate, converting a portion of light of the first LED chips to generate a fluorescent light. | ||
地址 | Tainan TW |