Semiconductor device

摘要

A semiconductor device includes a first and second transistor. Each of the first and the second transistors includes a well of a first conductivity type, a band-shaped region provided on the well, a drain region of a second conductivity type provided on the well, and a gate electrode. The band-shaped region, the drain region and the gate electrode extend in a first direction. The band-shaped region includes a back gate region of the first conductivity type and a source region of the second conductivity type. The back gate region and the source region are arranged alternately along the first direction in the band-shaped region. A ratio of a length of the source region to a length of the back gate region along the first direction of the first transistor is greater than the ratio of the second transistor.

主权项

1. A semiconductor device, comprising:
a substrate; a first transistor provided on the substrate; and a second transistor provided on the substrate, each of the first transistor and the second transistor including:
a well of a first conductivity type;a band-shaped region provided on the well, the band-shaped region extending in a first direction;a drain region of a second conductivity type provided on the well and separated from the band-shaped region in a second direction perpendicular to the first direction, the drain region extending in the first direction;a gate electrode provided in a region directly on a region of the well between the band-shaped region and the drain region, the gate electrode extending in the first direction; and the band-shaped region including:
a back gate region of the first conductivity type, an effective impurity concentration of the back gate region being higher than an effective impurity concentration of the well; anda source region of the second conductivity type, an effective impurity concentration in the source region being higher than the effective impurity concentration of the well, the back gate region and the source region being arranged alternately along the first direction in the band-shaped region, a ratio of a length of the source region along the first direction to a length of the back gate region along the first direction in the band-shaped region of the first transistor being greater than the ratio in the band-shaped region of the second transistor.