发明名称 Moisture barrier for semiconductor structures with stress relief
摘要 A semiconductor structure is disclosed. The semiconductor structure includes an electrically conductive layer disposed over a substrate. A moisture barrier layer is disposed over the substrate and between the substrate and the electrically conductive layer. A dielectric layer is disposed over the moisture barrier layer. The dielectric layer has an elastic modulus that is lower than an elastic modulus of the moisture barrier layer.
申请公布号 US9576920(B2) 申请公布日期 2017.02.21
申请号 US201615218528 申请日期 2016.07.25
申请人 Avago Technologies General IP (Singapore) Pte. Ltd. 发明人 Abrokwah Jonathan;Dixon Forest;Dungan Thomas;Halac Greg;Snyder Rick
分类号 H01L23/06;H01L23/10;H01L23/522;H01L23/00 主分类号 H01L23/06
代理机构 代理人
主权项 1. A semiconductor structure, comprising: a substrate comprising a semiconductor device, or a passive electrical element, or both, disposed therein, or thereover, or both; an electrically conductive layer disposed over the substrate, and configured to make electrical contact with the semiconductor device, or the passive electrical element, or both, the electrically conductive layer having edges that form a perimeter of the electrically conductive layer; an adhesion layer disposed beneath the electrically conductive layer and extending past the edges; and a moisture barrier layer disposed beneath the adhesion layer.
地址 Singapore SG