发明名称 Copper foil with carrier, method of producing same, copper foil with carrier for printed wiring board, and printed wiring board
摘要 Provided is a copper foil for a printed wiring board including a roughened layer on at least one surface thereof. In the roughened layer, the average diameter D1 at the particle bottom being apart from the bottom of each particle by 10% of the particle length is 0.2 to 1.0 μm, and the ratio L1/D1 of the particle length L1 to the average diameter D1 at the particle bottom is 15 or less. In the copper foil for printed wiring board, when a copper foil for printed wiring having a roughened layer is laminated to a resin and then the copper layer is removed by etching, the sum of areas of holes accounting for the resin roughened surface having unevenness is 20% or more. The present invention involves the development of a copper foil for a semiconductor package substrate that can avoid circuit erosion without causing deterioration in other properties of the copper foil. In particular, an object of the present invention is to provide a copper foil for a printed wiring board and a method of producing the copper foil, in which the adhesion strength between the copper foil and the resin can be enhanced by improvement of the roughened layer of the copper foil.
申请公布号 US9578741(B2) 申请公布日期 2017.02.21
申请号 US201314388381 申请日期 2013.03.26
申请人 JX Nippon Mining & Metals Corporation 发明人 Nagaura Tomota;Kohiki Michiya;Moriyama Terumasa
分类号 H05K3/38;H05K3/18;H05K3/02;H05K3/06;H05K1/03;H05K1/09;B32B15/20;B32B3/30;B32B15/01;C22C9/00;B32B15/08 主分类号 H05K3/38
代理机构 Marshall, Gerstein & Borun LLP 代理人 Marshall, Gerstein & Borun LLP
主权项 1. A copper foil with a carrier comprising a carrier, an intermediate layer, and an ultra-thin copper layer laminated in this order, the ultra-thin copper layer having a thickness smaller than a thickness of the carrier, wherein the ultra-thin copper layer includes a roughened layer on a surface thereof, and the roughened layer comprises particles having an average diameter D1 at the particle bottom being apart from the bottom of each particle by 10% of the particle length L1 of 0.2 to 1.0 μm and having a ratio L1/D1 of the particle length L1 to the average diameter D1 at the particle bottom of 15 or less.
地址 Tokyo JP