Semiconductor package including conductive carrier coupled power switches

摘要

In one implementation, a semiconductor package including conductive carrier coupled power switches includes a first vertical FET in a first active die having a first source and a first gate on a source side of the first active die and a first drain on a drain side of the first active die. The semiconductor package also includes a second vertical FET in a second active die having a second source and a second gate on a source side of the second active die and a second drain on a drain side of the second active die. The semiconductor package includes a conductive carrier attached to the source side of the first active die and to the drain side of the second active die, the conductive carrier coupling the first source to the second drain.

主权项

1. A semiconductor package comprising:
a first vertical FET in a first active die having a first source and a first gate on a source side of said first active die and a first drain on a drain side of said first active die; a second vertical FET in a second active die having a second source and a second gate on a source side of said second active die and a second drain on a drain side of said second active die; a first conductive carrier attached to said source side of said first active die and to said drain side of said second active die; wherein said first conductive carrier:
includes a side surface of said first conductive carrier is exposed;electrically couples said first source to said second drain, andcarries the first vertical FET and the second vertical FET by providing structural support element of said semiconductor package; a second conductive carrier attached to said first gate on said source side of said first active die.