Method for manufacturing semiconductor device

摘要

When a recess is formed in a SiCOH film, C is removed from the film to form a damage layer. If the damage layer is removed by hydrofluoric acid or the like, the surface becomes hydrophobic. By supplying a boron compound gas, a silicon compound gas or a gas containing trimethyl aluminum to the SiCOH film, B, Si or Al is adsorbed on the SiCOH film. These atoms bond with Ru and a Ru film is easily formed on the SiCOH film. The Ru film is formed using, for example, Ru3(CO)12 gas and CO gas. Copper is filled in the recess and an upper side wiring structure is formed by carrying out CMP processing.

主权项

1. A method for manufacturing a semiconductor device, comprising:
adsorbing boron atoms or aluminum atoms onto a hydrophobic surface of an insulating film containing silicon, carbon, hydrogen and oxygen, which is formed on a substrate and includes a recess formed in the insulating film to expose a conductive path of a lower layer side at a bottom portion thereof, by supplying one of a gas of boron compound and a gas of organic compound containing aluminum to the insulating film; forming an adherence film made of a ruthenium (Ru) film directly on the surface of the insulating film onto which the boron atoms or the aluminum atoms are adsorbed; and filling copper serving as a conductive path in the recess.