发明名称 Systems and methods for press force detectors
摘要 Certain example embodiments include a press sensor element that includes a piezoelectric layer having a first surface in communication with a first layer, the first layer including a first conductive region, where the first conductive region covers at least a central portion the first surface. The sensor element includes a second surface in communication with a second layer, the second layer including a second conductive region, a third conductive region, and a first non-conductive void region separating the second conductive region and the third conductive region. An area of the first conductive region is configured in size relative to an area of the third conductive region to substantially reduce a thermally-induced voltage change between two or more of the first, second, and third conductive regions responsive to a corresponding temperature change of at least a portion of the piezoelectric layer.
申请公布号 US9574954(B2) 申请公布日期 2017.02.21
申请号 US201614987907 申请日期 2016.01.05
申请人 INTERLINK ELECTRONICS, INC. 发明人 Baker Jeffrey R.;Yousafian Edwin Keshesh;Flannery Declan Christopher
分类号 G01L1/16;G01L9/02;G01L9/06 主分类号 G01L1/16
代理机构 Troutman Sanders LLP 代理人 Troutman Sanders LLP
主权项 1. A sensor element comprising: a piezoelectric layer including: a first surface in communication with a first layer, the first layer comprising a first conductive region, wherein the first conductive region covers at least a central portion the first surface; anda second surface in communication with a second layer, the second layer comprising: a second conductive region;a third conductive region; anda first non-conductive void region separating the second conductive region and the third conductive region; wherein the second conductive region is disposed in a central portion of the sensor element, the first non-conductive void region surrounds the second conductive region, and the third conductive region surrounds the first non-conductive void region; and wherein an area of the first conductive region is configured in size relative to an area of the third conductive region to substantially reduce a thermally-induced voltage change between two or more of the first, second and third conductive regions responsive to a corresponding temperature change of at least a portion of the piezoelectric layer.
地址 Westlake Village CA US
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