Side interconnect for light emitting device

摘要

Embodiments of the invention include a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region. A metal n-contact is connected to the n-type region. A metal p-contact is in direct contact with the p-type region. An interconnect is electrically connected to one of the n-contact and the p-contact. The interconnect is disposed adjacent to the semiconductor structure.

主权项

1. A light emitting device comprising:
a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region, the semiconductor structure having a first side and a second side wherein the second side is opposite the first side; a metal n-contact connected to the n-type region and a metal p-contact in direct contact with the p-type region, wherein the n-contact and the p-contact are both formed on the first side of the semiconductor structure, wherein a majority of light extracted from the semiconductor structure is extracted from the second side of the semiconductor structure; and an interconnect in direct contact with one of the n-contact and the p-contact, wherein the interconnect is disposed adjacent to the semiconductor structure; wherein the p-contact is disposed over a sidewall of the semiconductor structure and over the interconnect.