Method for forming integrated circuit structure with thinned contact

摘要

Methods for forming integrated circuit structures are provided. The method includes providing a substrate including a first diffusion region, a second diffusion region, and an isolation structure separating the first diffusion region and the second diffusion region. The method further includes forming a gate structure over the substrate and forming an inter-layer dielectric (ILD) layer over the substrate. The method further includes forming a cutting mask over a portion of the gate structure over the isolation structure, and the cutting mask has an extending portion covering a portion of the ILD layer. The method further includes forming a photoresist layer having an opening, and a portion of the extending portion of the cutting mask is exposed by the opening. The method further includes etching the ILD layer through the opening to form a trench and filling the trench with a conductive material to form a contact.

主权项

1. A method for forming an integrated circuit (IC) structure, comprising:
providing a substrate comprising a first diffusion region, a second diffusion region, and an isolation structure separating the first diffusion region and the second diffusion region; forming a gate structure over the substrate; forming an inter-layer dielectric (ILD) layer adjacent to the gate structure over the substrate; forming a cutting mask over a portion of the gate structure over the isolation structure, wherein the cutting mask has an extending portion covering a portion of the ILD layer over the isolation structure; forming a photoresist layer having an opening, wherein a portion of the extending portion of the cutting mask is exposed by the opening; etching the ILD layer through the opening to form a trench; and filling the trench with a conductive material to form a contact.