Devices formed from a non-polar plane of a crystalline material and method of making the same

摘要

Materials, methods, structures and device including the same can provide a semiconductor device such as an LED using an active region corresponding to a non-polar face or surface of III-V semiconductor crystalline material. In some embodiments, an active diode region contains more non-polar III-V material oriented to a non-polar plane than III-V material oriented to a polar plane. In other embodiments, a bottom region contains more non-polar m-plane or a-plane surface area GaN than polar c-plane surface area GaN facing an active region.

主权项

1. A diode comprising:
first diode region comprising a III-N semiconductor crystalline material having a polar plane and a non-polar plane; and a second diode region proximate the first diode region, an active diode region being disposed between the first diode region and the second diode region, at least a portion of the active diode region and the second diode region being along the polar plane and the non-polar plane of the III-N semiconductor crystalline material.