| 发明名称 | Polishing apparatus and polishing method | ||
| 摘要 | A polishing apparatus capable of eliminating a variation in film thickness along a circumferential direction of a substrate, such as a wafer, is disclosed. The polishing apparatus includes: a polishing head including an elastic membrane for pressing the substrate against the polishing surface and a retainer ring arranged so as to surround the substrate, the retainer ring being capable of contacting the polishing surface; a rotating mechanism configured to rotate the polishing head about its own axis; a rotation angle detector configured to detect a rotation angle of the polishing head; and a polishing controller configured to periodically change a polishing condition of the substrate in synchronization with the rotation angle of the polishing head. | ||
| 申请公布号 | US9573241(B2) | 申请公布日期 | 2017.02.21 |
| 申请号 | US201514854530 | 申请日期 | 2015.09.15 |
| 申请人 | Ebara Corporation | 发明人 | Fukushima Makoto;Yasuda Hozumi;Namiki Keisuke |
| 分类号 | C23F1/00;B24B37/005;B24B37/04;H01L21/3105;H01L21/321 | 主分类号 | C23F1/00 |
| 代理机构 | Baker & Hostetler LLP | 代理人 | Baker & Hostetler LLP |
| 主权项 | 1. A polishing apparatus for polishing a substrate by bringing the substrate into sliding contact with a polishing surface, comprising: a polishing head including an elastic membrane for pressing the substrate against the polishing surface and a retainer ring arranged so as to surround the substrate, the retainer ring being capable of contacting the polishing surface; a rotating mechanism configured to rotate the polishing head about its own axis; a rotation angle detector configured to detect a rotation angle of the polishing head; and a polishing controller configured to periodically change a polishing condition of the substrate in synchronization with the rotation angle of the polishing head. | ||
| 地址 | Tokyo JP | ||