发明名称 |
A metal-semiconductor-metal (MSM) heterojunction diode |
摘要 |
In one aspect, a diode comprises: a semiconductor layer having a first side and a second side opposite the first side, the semiconductor layer having a thickness between the first side and the second side, the thickness of the semiconductor layer being based on a mean free path of a charge carrier emitted into the semiconductor layer; a first metal layer deposited on the first side of the semiconductor layer; and a second metal layer deposited on the second side of the semiconductor layer. |
申请公布号 |
AU2013249127(B2) |
申请公布日期 |
2017.02.16 |
申请号 |
AU20130249127 |
申请日期 |
2013.04.19 |
申请人 |
Carnegie Mellon University |
发明人 |
Hussin, Rozana;Chen, Yixuan;Luo, Yi |
分类号 |
H01L29/861 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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