DUAL GATE DEVICE AND MANUFACTURING METHOD THEREOF

摘要

The embodiment of the disclosure discloses a method of manufacturing the dual gate device, comprising: forming a first metal layer on a substrate; patterning the first metal layer through a first mask to form a bottom gate electrode; coating a first organic isolation layer on the bottom gate electrode and the substrate; sputtering a second metal layer on the first organic isolation layer; patterning the second metal layer to form a source-drain electrode; disposing an organic semiconductor layer, a second organic isolation layer and a third metal layer sequentially on the source-drain electrode and the first organic isolation layer; and patterning the organic semiconductor layer, the second organic isolation layer and the third metal layer through a third mask to form a top gate electrode. The top gate electrode overlapping the source-drain electrode makes the dual gate device to reduce the device contact resistance and saves the power consumption.

主权项

1. A method of manufacturing a dual gate device, comprising:
forming a first metal layer on a substrate; patterning the first metal layer through a first mask to form a bottom gate electrode; coating a first organic isolation layer on the bottom gate electrode and the substrate; sputtering a second metal layer on the first organic isolation layer; patterning the second metal layer through a second mask to form a source-drain electrode; disposing an organic semiconductor layer, a second organic isolation layer and a third metal layer sequentially on the source-drain electrode and the first organic isolation layer; and patterning the organic semiconductor layer, the second organic isolation layer and the third metal layer through a third mask to form a top gate electrode.