发明名称 |
DEVICES USING CAVITIES TO DISTRIBUTE CONDUCTIVE PATTERNING RESIDUE AND DEVICES FABRICATED USING THE SAME |
摘要 |
Methods of manufacturing a semiconductor device include forming a conductive layer on a substrate, forming an air gap or other cavity between the conductive layer and the substrate, and patterning the conductive layer to expose the air gap. The methods may further include forming conductive pillars between the substrate and the conductive layer. The air gap may be positioned between the conductive pillars. |
申请公布号 |
US2017047509(A1) |
申请公布日期 |
2017.02.16 |
申请号 |
US201615340330 |
申请日期 |
2016.11.01 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Park Jongchul;BAE BYOUNGJAE;KIM INHO;KWON SHIN;NOH EUNSUN;PARK INSUN;LEE SANGMIN |
分类号 |
H01L43/02;H01L27/22;H01L43/12;H01L43/08;H01L43/10 |
主分类号 |
H01L43/02 |
代理机构 |
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代理人 |
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主权项 |
1. A magnetic memory device comprising:
a substrate; contacts disposed on the substrate; conductive pillars disposed on the contacts; magnetic tunnel junction structures disposed on the conductive pillars; and residual mold patterns provided under the magnetic tunnel junction structures, the residual mold patterns surrounding upper portions of the conductive pillars. |
地址 |
Suwon-si KR |