发明名称 |
FIN STRUCTURE CUTTING PROCESS |
摘要 |
A fin structure cutting process includes the following steps. Four fin structures are formed in a substrate, where the four fin structures including a first fin structure, a second fin structure, a third fin structure and a fourth fin structure are arranged sequentially and parallel to each other. A first fin structure cutting process is performed to remove top parts of the second fin structure and the third fin structure, thereby a first bump being formed from the second fin structure, and a second bump being formed from the third fin structure. A second fin structure cutting process is performed to remove the second bump and the fourth fin structure completely, but to preserve the first bump beside the first fin structure. Moreover, the present invention provides a fin structure formed by said process. |
申请公布号 |
US2017047244(A1) |
申请公布日期 |
2017.02.16 |
申请号 |
US201615336811 |
申请日期 |
2016.10.28 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Huang Tong-Jyun;Huang Rai-Min;Tseng I-Ming;Li Kuan-Hsien;Huang Chen-Ming |
分类号 |
H01L21/762;H01L21/308;H01L29/06;H01L21/8234;H01L27/088;H01L21/3065;H01L21/02 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
1. A fin structure cutting process, comprising:
forming four fin structures in a substrate, wherein the four fin structures comprise a first fin structure, a second fin structure, a third fin structure and a fourth fin structure arranged sequentially and parallel to each other; performing a first fin structure cutting process to remove tops of the second fin structure and the third fin structure, thereby a first bump being formed from the second fin structure, and a second bump being formed from the third fin structure; and performing a second fin structure cutting process to remove the second bump and the fourth fin structure completely but to preserve the first bump beside the first fin structure. |
地址 |
Hsin-chu City TW |