| 发明名称 |
SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING SYSTEM |
| 摘要 |
A substrate processing apparatus includes a placing table configured to hold a substrate having a processing target film, which is decomposed by irradiating an ultraviolet ray thereto under an oxygen-containing atmosphere; a processing chamber, configured to accommodate therein the substrate placed on the placing table, having therein the oxygen-containing atmosphere; and an ultraviolet ray irradiation device configured to irradiate the ultraviolet ray to the substrate within the processing chamber. Further, the placing table is provided with a surrounding member configured to surround the substrate placed on the placing table and restrict a gas introduction amount from an outside of the substrate toward above the substrate. |
| 申请公布号 |
US2017047233(A1) |
申请公布日期 |
2017.02.16 |
| 申请号 |
US201615340027 |
申请日期 |
2016.11.01 |
| 申请人 |
Tokyo Electron Limited |
发明人 |
Kaneda Masatoshi;Ohishi Yuzo;Yoshida Keisuke |
| 分类号 |
H01L21/67;B05C11/08;B05C11/10;H01L21/311 |
主分类号 |
H01L21/67 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A substrate processing apparatus, comprising:
a placing table configured to hold a substrate having a processing target film, which is decomposed by irradiating an ultraviolet ray thereto under an oxygen-containing atmosphere; a processing chamber, configured to accommodate therein the substrate placed on the placing table, having therein the oxygen-containing atmosphere; and an ultraviolet ray irradiation device configured to irradiate the ultraviolet ray to the substrate within the processing chamber, wherein the placing table is provided with a surrounding member configured to surround the substrate placed on the placing table and restrict a gas introduction amount from an outside of the substrate toward above the substrate. |
| 地址 |
Tokyo JP |
