METHOD FOR MANUFACTURING SILICON NITRIDE THIN FILM USING PLASMA ATOMIC LAYER DEPOSITION METHOD

摘要

The present invention relates to a method for manufacturing a silicon nitride thin film using a plasma atomic layer deposition method and, more particularly, the purpose of the present invention is to provide a method for manufacturing a silicon nitride thin film including a high quality Si-N bond under the condition of lower power and film-forming temperature, by applying an amino silane derivative having a specific Si-N bond to a plasma atomic layer deposition method.