| 摘要 |
According to the present invention, an element main body 2 has: a metal high-specific—surface-area substrate 7 that has a large specific surface area and that has fine pores 7a formed therein; a dielectric layer 8 that is formed in a prescribed region of the surface of the high-specific-surface-area substrate 7 that includes the inner surfaces of the pores 7a; and a conductive part 5 that is formed upon the dielectric layer 8. A first terminal electrode 1a is electrically connected to the high-specific-surface-area substrate 7. A second terminal electrode 2b is electrically connected to the conductive part 5. The dielectric layer 8 is interposed between the conductive part 5 and the high-specific-surface-area substrate 7, and the high-specific-surface-area substrate 7 and the second terminal electrode 1b are electrically insulated from each other. A plurality of these capacitors can be obtained from a large, aggregate, so-called multi-piece substrate. The dielectric layer 8 and the conductive part 5 are prepared by atomic layer deposition. As a result, the present invention achieves a new type of capacitor and a production method therefor, the capacitor being small, high capacity, and highly reliable and having favorable low resistance and insulating properties. |
