SEMICONDUCTOR DEVICE AND A MANUFACTURING METHOD THEREOF

摘要

The characteristics of a semiconductor device are improved. A semiconductor device has an impurity-containing potential fixed layer, and a gate electrode. A drain electrode and a source electrode are formed on the opposite sides of the gate electrode. An interlayer insulation film is formed between the gate electrode and the drain electrode, and between the gate electrode and the source electrode. The concentration of the inactivating element in the portion of the potential fixed layer under the drain electrode is higher than the concentration of the inactivating element in the portion of the potential fixed layer under the source electrode. The film thickness of the portion of the interlayer insulation film between the gate electrode and the drain electrode is different from the film thickness of the portion of the interlayer insulation film between the gate electrode and the source electrode.

主权项

1. A semiconductor device having:
a substrate; a first nitride semiconductor layer formed over the substrate, and containing a p type first impurity; a gate electrode formed over the first nitride semiconductor layer; a first electrode formed over the first nitride semiconductor layer, and arranged on a first side with respect to the gate electrode in a plan view; a second electrode formed over the first nitride semiconductor layer, and arranged on the side opposite to the first side with respect to the gate electrode in a plan view; and a first insulation film formed between the gate electrode and the first electrode, and between the gate electrode and the second electrode, wherein a first portion of the first nitride semiconductor layer situated under the first electrode contains a first element for inactivating the first impurity, wherein a second portion of the first nitride semiconductor layer situated under the second electrode contains the first element in a lower concentration than the concentration of the first element in the first portion, or does not contain the first element, and wherein the film thickness of a third portion of the first insulation film situated between the gate electrode and the first electrode is different from the film thickness of a fourth portion of the first insulation film situated between the gate electrode and the second electrode.