| 发明名称 |
NITRIDE SEMICONDUCTOR DEVICE |
| 摘要 |
A nitride semiconductor device according to the present invention includes a nitride semiconductor layer including an electron transit layer and an electron supply layer which is in contact with the electron transit layer and which has a composition different from that of the electron transit layer, a gate electrode on the nitride semiconductor layer and a gate insulating film between the gate electrode and the nitride semiconductor layer. A region whose depth is 250 nm from an interface between the gate insulating film and the gate electrode includes a region which has a deep acceptor concentration equal to or more than 1.0×1016 cm−3. |
| 申请公布号 |
US2017047412(A1) |
申请公布日期 |
2017.02.16 |
| 申请号 |
US201615232305 |
申请日期 |
2016.08.09 |
| 申请人 |
ROHM CO., LTD. |
发明人 |
TANAKA Taketoshi;AKUTSU Minoru;ITO Norikazu |
| 分类号 |
H01L29/423;H01L29/205;H01L29/778;H01L29/20 |
主分类号 |
H01L29/423 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A nitride semiconductor device comprising:
a nitride semiconductor layer including an electron transit layer and an electron supply layer which is in contact with the electron transit layer and which has a composition different from a composition of the electron transit layer; a gate electrode on the nitride semiconductor layer; and a gate insulating film between the gate electrode and the nitride semiconductor layer, wherein a region whose depth is 250 nm from an interface between the gate insulating film and the gate electrode includes a region which has a deep acceptor concentration equal to or more than 1.0×1016 cm−3. |
| 地址 |
Kyoto JP |
