发明名称 MEMORY CELLS
摘要 Some embodiments include a memory cell having a pair of electrodes, and a plurality of switching levels between the electrodes. Each switching level has an ion buffer region and a dielectric region. At least one switching level differs from another switching level in one or both of thickness and composition of the ion buffer region and/or the dielectric region.
申请公布号 WO2017027175(A1) 申请公布日期 2017.02.16
申请号 WO2016US42904 申请日期 2016.07.19
申请人 MICRON TECHNOLOGY, INC. 发明人 RAMASWAMY, Durai Vishak Nirmal;COLLINS, Dale W.;PETZ, Christopher W.;COOK, Beth R.
分类号 H01L45/00 主分类号 H01L45/00
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