Some embodiments include a memory cell having a pair of electrodes, and a plurality of switching levels between the electrodes. Each switching level has an ion buffer region and a dielectric region. At least one switching level differs from another switching level in one or both of thickness and composition of the ion buffer region and/or the dielectric region.
申请公布号
WO2017027175(A1)
申请公布日期
2017.02.16
申请号
WO2016US42904
申请日期
2016.07.19
申请人
MICRON TECHNOLOGY, INC.
发明人
RAMASWAMY, Durai Vishak Nirmal;COLLINS, Dale W.;PETZ, Christopher W.;COOK, Beth R.