METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM

摘要

To provide a technology of performing stable etching at a desired etching rate in etching processing of a silicon layer. The present invention has: a step for carrying a substrate into a processing chamber, said substrate having a silicon layer that is formed on the surface; a step for supplying an etching gas to the inside of the processing chamber after the substrate is carried into the processing chamber, said etching gas being supplied for the purpose of etching silicon; a step for maintaining a state wherein the etching gas supply and air release from the inside of the processing chamber are stopped; and a step for supplying the etching gas to the inside of the processing chamber, while releasing air from the inside of the processing chamber.